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| V30100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 8 A FEATURES * Trench MOS Schottky Technology * Low forward voltage drop, low power losses 3 2 1 * High efficiency operation * Low thermal resistance * Solder Dip 260 C, 40 seconds * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, free-wheeling diodes, Oring diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs Maximum TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE MAJOR RATINGS AND CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A Tj max. 2 x 15 A 100 V 120 A 0.65 V 150 C MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified (see Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range per device per diode SYMBOL VRRM IF(AV) IFSM TJ, TSTG V30100P 100 30 15 120 - 40 to + 150 UNIT V A A C Document Number 88973 27-Apr-07 www.vishay.com 1 V30100P Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Breakdown voltage Instantaneous forward voltage (1) per diode TEST CONDITIONS at IR = 1.0 mA at IF = 8 A IF = 15 A at IF = 8 A IF = 15 A at VR = 70 V Reverse current (1) per diode at VR = 100 V Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle Tj = 25 C Tj = 25 C VF Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C SYMBOL V(BR) TYP. 100 (minimum) 0.64 0.78 0.57 0.65 3.30 3.25 IR 13.7 7.2 MAX. 0.85 V 0.71 300 20 A mA A mA UNIT V THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RJC V30100P 2.0 UNIT C/W ORDERING INFORMATION PREFERRED P/N V30100P-E3/45 UNIT WEIGHT (g) 6.12 PREFERRED PACKAGE CODE 45 BASE QUANTITY 30/Tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 35 Resistive or Inductive Load 14 D = 0.8 12 D = 0.5 D = 0.3 10 8 6 D = 0.1 D = 0.2 D = 1.0 Average Forward Current (A) 30 25 20 15 10 5 0 0 25 50 75 100 125 150 Average Power Loss (W) T 4 2 0 0 2 4 6 8 10 12 14 16 18 Mounted on specific heatsink D = tp/T tp Case Temperature (C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 Document Number 88973 27-Apr-07 V30100P Vishay General Semiconductor 100 10000 Tj = 150 C Tj = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 Instantaneous Forward Current (A) 10 Tj = 125 C Tj = 25 C 1 100 0.1 0 0.5 1 1.5 2 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (mA) Junction to Case Tj = 150 C 10 Tj = 125 C 1 1 0.1 0.01 Tj = 25 C 0.001 10 20 30 40 50 60 70 80 90 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 0.078 REF (1.98) 10 30 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5) 10 TYP. BOTH SIDES 1 2 3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.118 (3.0) 0.108 (2.7) 1 REF. BOTH SIDES 0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6) 0.117 (2.97) 0.225 (5.7) 0.205 (5.2) 0.048 (1.22) 0.044 (1.12) PIN 1 PIN 3 0.030 (0.76) 0.020 (0.51) PIN 2 CASE Document Number 88973 27-Apr-07 www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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